Deposition apparatus

ABSTRACT

A deposition apparatus including a crucible to receive the deposition material and in which a deposition material is evaporated; a linear deposition source having a sprayer to spray the evaporated deposition material; a first connection portion and a second connection portion spaced apart from each other by a predetermined interval, the first connection portion and the second connection portion connecting the linear deposition source to the crucible at an upper surface of the crucible; and a heater in the crucible to apply heat to the deposition material, wherein the upper surface of the crucible has a first convex portion and a second convex portion successively formed between the first connection portion and the second connection portion.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2015-0051136, filed on Apr. 10, 2015,in the

Korean Intellectual Property Office, and entitled: “DepositionApparatus,” is incorporated by reference herein in its entirety.

BACKGROUND

1. Field

Embodiments relate to a deposition apparatus.

2. Description of the Related Art

An organic light emitting display device may be used to form a displayapparatus for a mobile apparatus such as a smartphone, a tablet personalcomputer (PC), an ultra slim notebook computer, a digital camera, avideo camera, a personal digital assistant (PDA) or anelectronic/electric product such as an ultra slim profile television(TV). Thus, the organic light emitting display device has been in thelimelight. The organic light emitting display device may be formed byusing a deposition method whereby a deposition material is evaporatedand generated gas molecules are adhered to a glass substrate to form alayer on the glass substrate.

SUMMARY

Embodiments are directed to a deposition apparatus.

The embodiments may be realized by providing a deposition apparatus,including a crucible to receive the deposition material and in which adeposition material is evaporated; a linear deposition source having asprayer to spray the evaporated deposition material; a first connectionportion and a second connection portion spaced apart from each other bya predetermined interval, the first connection portion and the secondconnection portion connecting the linear deposition source to thecrucible at an upper surface of the crucible; and a heater in thecrucible to apply heat to the deposition material, wherein the uppersurface of the crucible has a first convex portion and a second convexportion successively formed between the first connection portion and thesecond connection portion.

The crucible may extend lengthwise in one direction, and the firstconvex portion and the second convex portion may each include a firstinclination portion inclined at a first angle with respect to the onedirection, and a second inclination portion inclined at a second anglewith respect to the one direction.

The crucible may include a first joining portion that connects the firstconvex portion with the second convex portion, the first joining portionhaving a curved shape.

The crucible may include a second joining portion that connects thefirst inclination portion with the second inclination portion, thesecond joining portion having a curved shape.

The heater may include a plurality of first heaters and a plurality ofsecond heaters, the plurality of first heaters may extend in onedirection and may be arranged next to each other to be separated fromeach other by a predetermined pitch, and the plurality of second heatersmay extend in a direction perpendicular to the one direction and may bearranged next to each other to be separated from each other by apredetermined pitch.

The apparatus may further include a temperature detector in thecrucible; and a temperature controller to transmit a temperature controlsignal to a power source that supplies power to the heater according totemperature of the crucible detected by the temperature detector.

The apparatus may further include a transfer portion to move the lineardeposition source and the crucible in a first direction.

A substrate onto which the deposition material is sprayed from thelinear deposition source may have a large size.

The embodiments may be realized by providing a deposition apparatusincluding a crucible to receive the deposition material and in which adeposition material is evaporated; a linear deposition source having asprayer to spray the evaporated deposition material; a first connectionportion and a second connection portion spaced apart from each other bya predetermined interval, the first connection portion and the secondconnection portion connecting the linear deposition source to thecrucible at an upper surface of the crucible; and a heater in thecrucible to apply heat to the deposition material, wherein the heaterfaces the upper surface of the crucible and includes a first concaveportion and a second concave portion successively formed between thefirst connection portion and the second connection portion.

The crucible may extend lengthwise in one direction, and the firstconcave portion and the second concave portion may each include a firstinclination heater portion inclined at a first angle with respect to theone direction, and a second inclination heater portion inclined at asecond angle with respect to the one direction.

The first inclination heater portion and the second inclination heaterportion may each include a plurality of first heaters and a plurality ofsecond heaters, the plurality of first heaters may extend in onedirection and may be arranged next to each other to be separated fromeach other by a predetermined interval, and the plurality of secondheaters may extend in a direction perpendicular to the one direction andmay be arranged next to each other to be separated from each other by apredetermined interval.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1A illustrates a schematic view of a deposition apparatus accordingto an exemplary embodiment;

FIG. 1B illustrates a perspective view of a linear deposition source andan evaporator of FIG. 1A;

FIG. 2 illustrates a cross-sectional view taken along a line A-A of FIG.1B;

FIG. 3A illustrates a schematic perspective view of an evaporator, afirst connection portion, and a second connection portion;

FIG. 3B illustrates a cross-sectional view of the evaporator, the firstconnection portion, and the second connection portion of FIG. 3A, takenalong a line B-B;

FIG. 4A illustrates a schematic perspective view of an evaporator, afirst connection portion, and a second connection portion according toan exemplary embodiment;

FIG. 4B illustrates a cross-sectional view of the evaporator, the firstconnection portion, and the second connection portion of FIG. 4A, takenalong a line C-C;

FIG. 5A illustrates a schematic perspective view of an evaporator, afirst connection portion, and a second connection portion according toanother exemplary embodiment;

FIG. 5B illustrates a cross-sectional view of the evaporator, the firstconnection portion, and the second connection portion of FIG. 5A, takenalong a line D-D; and

FIG. 6 illustrates a schematic cross-sectional view of an evaporator, afirst connection portion, and a second connection portion according toanother exemplary embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers may also be present. Like reference numerals refer tolike elements throughout.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “includes,” “comprises”and/or “comprising” used herein specify the presence of stated featuresor components, but do not preclude the presence or addition of one ormore other features or components.

It will be understood that when a layer, region, or component isreferred to as being “formed on,” another layer, region, or component,it can be directly or indirectly formed on the other layer, region, orcomponent. For example, intervening layers, regions, or components maybe present.

FIG. 1A illustrates a schematic view of a deposition apparatus 10according to an exemplary embodiment. FIG. 1B illustrates a perspectiveview of an evaporator and a linear deposition source of the depositionapparatus 10 of FIG. 1A. FIG. 2 illustrates a cross-sectional view takenalong a line A-A of FIG. 1B.

Referring to FIGS. 1A, 1B, and 2, the deposition apparatus 10 accordingto an exemplary embodiment may include, e.g., a process chamber 100, alinear deposition source 200 inside the process chamber 100, and anevaporator 300 at a lower side of the linear deposition source 200. Inan implementation, a substrate holder 500 may be positioned to face thelinear deposition source 200.

The process chamber 100 may provide a space for performing a depositionprocess, and may further include a carrying port for carrying in/out asubstrate G and an exhaust terminal connected with a vacuum pump inorder to control the pressure of the inside of the process chamber 100and exhaust a deposition material not deposited on the substrate G. Inan implementation, the process chamber 100 may further include a maskassembly K positioned between the linear deposition source 200 and thesubstrate holder 500 and including a plurality of slits so that thedeposition material may be deposited on the substrate G in apredetermined pattern.

The substrate holder 500 may be for seating a substrate G carried intothe inside of the process chamber 100, and may further include aseparate fixing member for fixing the substrate G during a depositionprocess.

In an implementation, the deposition apparatus 10 according to anexemplary embodiment may include the linear deposition source 200positioned in a lower portion of the process chamber 100 and thesubstrate holder 500 may be positioned in the upper portion of theprocess chamber 100 to allow the substrate G to be fixed by thesubstrate holder 500 such that the substrate G is horizontal withrespect to the ground or bottom of the process chamber 100. In animplementation, the linear deposition source 200 may be positioned on alateral surface of one side of the process chamber 100, and thesubstrate holder 500 may be positioned on a lateral surface of anotherside of the process chamber 100 to allow the substrate G fixed to thesubstrate holder 500 to have an angle of about 70-110° with respect tothe ground or bottom of the process chamber 100, so that substratedeflection by gravity may be reduced and/or prevented.

The linear deposition source 200 may facilitate forming a layer on thesubstrate G using the deposition material by spraying the depositionmaterial (transferred from the evaporator 300) onto the substrate G. Thelinear deposition source 200 may have a length (e.g., a longer side)extending in one direction, e.g., a first direction T. A plurality ofsprayers 210 may be disposed on an upper portion of the lineardeposition source 200. The plurality of sprayers 210 may be disposed oraligned in parallel or linearly with each other with an equal intervalor pitch such that the length direction of the sprayers 210 may beapproximately perpendicular to a progression direction of the substrateG. For example, the length direction of each sprayer 210 or of thelinear deposition source may have a length approximately equal to thewidth of the substrate G, and the sprayers 210 may be formed in the sameshape and structure. In an implementation, a layer forming process maybe successively performed on the substrate G by gas molecules sprayedfrom the plurality of sprayers 210 in the inside of the process chamber100.

The deposition apparatus 10 may further include a transfer portion 600.The transfer portion 600 may move the linear deposition source 200 andthe evaporator 300 in the first direction T. The transfer portion 600may include, e.g., a ball screw 610, a motor 630 for rotating the ballscrew 610, and a guide 620 for controlling a movement direction of thelinear deposition source 200 and the evaporator 300. As the lineardeposition source 200 and the evaporator 300 are moved by the transferportion 600, the deposition apparatus 10 may allow a deposition materialM to be deposited on a wider area. Accordingly, the substrate G ontowhich the deposition material M is sprayed from the linear depositionsource 200 may be formed to have a large size.

The evaporator 300 may be or may include a heating portion forevaporating a deposition material. The evaporator 300 may include acrucible 310 and a plurality of heaters 400. The crucible 310 is astorage member for storing different kinds of deposition materials M asraw materials for forming a layer. A space for receiving the depositionmaterial M may be formed inside the crucible 310 according to anexemplary embodiment, and a plurality of openings 311 and 312 may bedisposed at ends, e.g., both ends, of the crucible 310 so that anevaporated deposition material M may move to the linear depositionsource 200 via a first connection portion 710 and a second connectionportion 720 which will be described below. For example, the crucible 310may extend (e.g., may have a long side that extends) along onedirection, e.g., the first direction T.

The heater 400 may be disposed on or at an upper portion of the crucible310 such that the heater 400 faces the lower portion of the crucible 310to apply heat to the deposition material M. For example, the heater 400may include a plurality of first heaters 410 (refer to FIG. 3A) and aplurality of second heaters 420 (refer to FIG. 3A). In animplementation, the plurality of first heaters 410 may extend along onedirection, e.g., the lengthwise or long direction of the crucible 310,and may be disposed or arranged side by side such that the plurality offirst heaters 410 are separated from each other with a predeterminedinterval or pitch. The plurality of second heaters 420 may extend in adirection perpendicular to the one direction, and may be disposed orarranged side by side such that the plurality of second heaters 420 areseparated from each other with a predetermined interval or pitch. Theheater 400 may be formed of or include, e.g., a heat emission coil, andmay be on or at the upper portion of the crucible 310 to apply heat tothe deposition material M disposed on or at the lower portion of thecrucible 310 as described above.

A temperature controller 430 may be a control unit that controls a heatemission degree of the heater 400, and may include, e.g., a storagemedium 431, a processor 433, an input/output (I/O) interface 434, and atemperature detector 435. The storage medium 431 may store datarepresenting a relation between temperature of the heater 400 and aformed layer thickness of the deposition material M or a program forfeedback-controlling the heater, etc. The temperature detector 435 is adetection member that may measure the inner temperature of the crucible310. The processor 433 may calculate a generation speed of a gasmolecule of the deposition material M by using an input signal input tothe I/O interface 434 using various data or the program stored in thestorage medium 431 and the inner temperature of the crucible 310detected by the temperature detector 435, and calculate a voltageapplied to the heater 400 from the calculated generation speed. Theprocessor 433 may transmit a temperature control signal to a power unit,and the power unit may apply a desired voltage to each heater based onthe temperature control signal transmitted from the processor 433.

The evaporator 300 may be connected with the linear deposition source200 through a plurality of connection portions 700. For example, thefirst connection portion 710 and the second connection portion 720 maybe disposed on or at sides, e.g., both side portions, of the crucible310 with a predetermined interval or space therebetween. The lineardeposition source 200 and the evaporator 300 may be connected with eachother by the first connection portion 710 and the second connectionportion 720. Accordingly, the deposition material M that is evaporatedfrom or in the evaporator 300 may be transferred to the lineardeposition source 200 via the first connection portion 710 and thesecond connection portion 720.

The evaporator 300 may further include a first valve 340 (that controlswhether an evaporated deposition material is supplied to the firstconnection portion 710 and the second connection portion 720), a secondvalve 350 (that controls whether the deposition material is supplied tothe crucible 310), and a gas supplier 360.

The first valves 340 may be disposed at the first connection portion 710and the second connection portion 720, respectively, and it is possibleto control whether to supply the deposition material M to the firstprocess chamber 100 by controlling opening/closing of the first valve340. The second valve 350 may be disposed between a raw material storage351 and the crucible 310. It is possible to control whether to supply araw material (for forming a layer) to the crucible 310 by controllingopening/closing of the second valve 350.

The gas supplier 360 that connects the inside of a second processchamber 100 with the inside of the crucible 310 may be disposed to thecrucible 310. The gas supplier 360 may supply an inert gas (e.g., an Argas) from a gas supply source to the inside of the crucible 310. Thesupplied insert gas may serve as a carrier gas for carrying thedeposition material M inside the crucible 310 up to the lineardeposition source 200 via the plurality of connection portions 700. Inan implementation, the deposition material M may be moved up to thelinear deposition source 200 via the plurality of connection portions700 even without a separate carrier gas. Hereinafter, for convenience indescription, the deposition material M including a carrier gas isgenerally called a deposition material M.

FIG. 3A illustrates a schematic perspective view of an evaporator 300, afirst connection portion 710, and a second connection portion 720. FIG.3B illustrates a cross-sectional view of the evaporator 300, the firstconnection portion 710, and the second connection portion 720 of FIG.3A, taken along a line B-B.

The deposition material M may pass through the connection portions 710and 720 to move from the evaporator 300 to the linear deposition source200 in the deposition apparatus 10 where the linear deposition source200 and the evaporator 300 have been separated, and a pressuredifference may occur between a region adjoining or adjacent to theconnection portions 710 and 720 and a region not adjoining or adjacentto the connection portions 710 and 720. Accordingly, flowage (e.g.,fluid flow) of the deposition material M inside or within the crucible310 may not be constant, and degeneration of the deposition material Mmay occur.

For example, referring to FIGS. 3A and 3B, first heaters 410 and secondheaters 420 may cross each other at the upper portion of the crucible310 to apply heat to the deposition material M. In an implementation,the first heaters 410 and the second heaters 420 may be disposeduniformly along the upper surface of the crucible 310. Accordingly, thefirst heaters 410 and second heaters 420 may apply constant heat, e.g.,heat of about 200-500° C. to all regions of the deposition material Mfacing the first heaters 410 and the second heaters 420.

The deposition material M may be evaporated by the first heater 410 andthe second heater 420. In an implementation, constant heat may beapplied to the deposition material M by the first heater 410 and thesecond heater 420, and an evaporating speed of the deposition material Mmay be maintained constant along the length direction of the crucible310. For example, the deposition material M may be evaporated at aconstant speed in a first region D1 (that is adjoining or adjacent tothe surface of the deposition material M). Thus, the evaporateddeposition material M may be raised all over or above the first regionD1.

The evaporated deposition material M may be raised up to a third regionD3 (that is adjoining or adjacent to the upper surface of the crucible310). As described above, the deposition material M may be constantlyraised via the first opening 311 and the second opening 312 connectedwith the first connection portion 710 and the second connection portion720, respectively, at ends, e.g., both ends, of the third region D3.However, flowage or fluid flow of the deposition material M disposedbetween the first opening 311 and the second opening 312 may be blockedby the upper surface of the crucible 310, so that the flowage thereofmay stagnate. Accordingly, the pressure of a region D3-2 (correspondingor aligned with the first opening 311 and the second opening 312) may besmaller than that of a region D3-1 (between the first opening 311 andthe second opening 312).

Depending on a pressure difference between the region D3-1 and theregion D3-2, the flowage direction of the deposition material M in thefirst region D1 may change from the second region D2 (between the firstregion D1 and the third region D3) to the region D3-2. For example, thepressure of the region D3-2 may be smaller than that of the region D3-1,and not only the flowage direction of the deposition material Mevaporated from or at ends, e.g., both ends, of the first region D1, butalso the flowage direction of the deposition material M evaporated fromor at the central portion of the first region D1 may change or beredirected toward the region D3-2 (whose pressure is relatively small).

On the contrary, a first pressure of the region D3-1 may be relativelyhigh, when compared to a second pressure of the region D3-2, a newdeposition material M evaporated from the first region D1 may not beintroduced to the region D3-1, and an already disposed depositionmaterial M may remain in the region D3-1. Accordingly, the depositionmaterial M remaining in the region D3-1 could degenerate or degrade. Ifthe degenerated or degraded deposition material M were to be depositedon the substrate G, purity deterioration of a formed layer may result,so that a defect of a display apparatus could occur.

FIG. 4A illustrates a schematic perspective view of an evaporator 300, afirst connection portion 710, and a second connection portion 720according to an exemplary embodiment. FIG. 4B illustrates across-sectional view of the evaporator 300, the first connection portion710, and the second connection portion 720 of FIG. 4A, taken along aline C-C. FIG. 5A illustrates a schematic perspective view of anevaporator 300, a first connection portion 710, and a second connectionportion 720 according to another exemplary embodiment. FIG. 5Billustrates a cross-sectional view of the evaporator 300, the firstconnection portion 710, and the second connection portion 720 of FIG.5A, taken along a line D-D.

As described above, the deposition material M may remain in the regionD3-1 due to a pressure distribution difference of the third region D3.In an implementation, the pressure distribution of the third region D3may be adjusted or controlled by changing a shape of the upper surfaceof the crucible 310, and flowage of the deposition material M within,into, and/or out of the region D3-1 may be generated or ensured.

Referring to FIGS. 4A and 4B, the upper surface of the crucible 310 mayinclude a first convex portion 313 and a second convex portion 314successively disposed between the first connection portion 710 and thesecond connection portion 720. For example, the first convex portion 313and the second convex portion 314 may extend along a widthwise (e.g.,short side) direction of the crucible 310, and may be symmetricallydisposed between the first connection portion 710 and the secondconnection portion 720. For example, the first convex portion 313 andthe second convex portion 314 may have first inclination portions 313-1,314-1, and second inclination portions 313-2, 314-2 inclined to form apredetermined angle with respect to the length direction of the crucible310. For example, the first inclination portions 313-1, 314-1 (e.g., thefirst inclination portion 314-1) may be plate-shaped members inclined(e.g., counterclockwise or in one direction) by or at a first angle θ1,e.g., about 20-60° with respect to a line or plane extending along thelength direction of the crucible 310. The second inclination portions313-2, 314-2 (e.g., the second inclination portion 313-2) areplate-shaped members inclined (e.g., clockwise or in another direction)at a second angle θ2, e.g., about 20-60° with respect to a line or planeextending along the length direction of the crucible 310. For example,the first inclination portion 314-1 may form a first angle θ1 withrespect to a plane extending along the length direction of the crucible310. For example, the second inclination portion 313-2 may form a secondangle θ2 (that faces a direction opposite to the first angle θ1) withrespect to a plane extending along the length direction of the crucible310. In an implementation, another angle may be formed between the firstinclination portion 314-1 and the second inclination portion 314-2 todirect flow of the evaporated material M from the region D3-1 toward thesecond connection portion 720. In an implementation, another angle maybe formed between the first inclination portion 313-1 and the secondinclination portion 313-2 to direct flow of the evaporated material Mfrom the region D3-1 toward the first connection portion 710.

The first convex portion 313 and the second convex portion 314 may be ina region D3-3 and a region D3-4 between the region D3-1 and the regionD3-2, and the region D3-3 and the region D3-4 may secure a relativelylarge space between the heater 400 and the upper surface of the crucible310 (compared to the region D3-1). Accordingly, in the case where thedeposition material M having the same flowing speed is introduced to theregion D3-1, the region D3-3, and the region D3-4, a third pressure P3and a fourth pressure P4 of the region D3-3 and the region D3-4 may besmaller than the first pressure of the region D3-1.

Depending on a pressure difference between the region D3-1 and theregion D3-3 and the region D3-4, the deposition material M introduced tothe region D3-1 may move up to the region D3-2 along the region D3-3 andthe region D3-4. Therefore, the deposition material M introduced to theregion D3-1 may move up to the region D3-2, and may be transferred tothe linear deposition source 100 via the first connection portion 710and the second connection portion 720. Accordingly, the depositionmaterial M introduced to the region D3-1 may not stagnate or remain inthe region D3-1, and degeneration and/or degradation of the depositionmaterial M may be reduced and/or prevented.

The shape of a first joining portion 214 between the first convexportion 313 and the second convex portion 314, and the shape of a secondjoining portion 215 between the first inclination portions 313-1, 314-1and the second inclination portions 313-2, 314-2 may change or may beselected so that flowage of the deposition material M that occursbetween the region D3-1 and the region D3-2 may be performed moreeasily.

Referring to FIGS. 5A and 5B, the first joining portion 214 and thesecond joining portion 215 may be formed in or as a curved surface shapeextending along the widthwise direction of the crucible 310. In the casewhere the deposition material M is introduced to the region D3-1,flowage of the deposition material M may be performed or may occur alongthe curved surface shape of the first joining portion 214 and the secondjoining portion 215. Accordingly, the deposition material M may betransferred up to the region D3-2 more easily, e.g., without stagnationin the region D3-1, and degeneration of the deposition materialintroduced to the region D3-1 may be reduced and/or prevented.

FIG. 6 illustrates a schematic cross-sectional view of an evaporator 300and a first connection portion 710 and a second connection portion 720according to another exemplary embodiment. For convenience indescription, repeated descriptions of the same configuration as FIGS. 4Aand 4B may be omitted.

As described above, the deposition material M could remain and/orstagnate in the region D3-1 due to a pressure distribution difference ofthe third region D3. In an implementation, flowage of the depositionmaterial M introduced to, out from, and/or into the region D3-1 may begenerated or occur not only due to a change in the shape of the uppersurface of the crucible 310, but also in the case of changing a pressuredistribution of the third region D3 by changing a shape of the heater400.

Referring to FIG. 6, the heater 400 may face the upper surface of thecrucible 310, and may include a first concave portion 431 and a secondconcave portion 432 between the first connection portion 710 and thesecond connection portion 720. For example, the first concave portion431 and the second concave portion 432 may be symmetrically disposed oraligned between the first connection portion 710 and the secondconnection portion 720, and may include first inclination heaterportions 431-1, 432-1 and second inclination heater portions 431-2,432-2 inclined to form a predetermined angle with respect to thelengthwise direction of the crucible 310. For example, the firstinclination heater portions 431-1, 432-1 may have a lattice structure offirst heaters 410 and second heaters 420 disposed such that the firstinclination heater portions 431-1, 432-1 are inclined (e.g., clockwiseor in one direction) at a first angle θ1 with respect to a line or planeextending along the lengthwise direction of the crucible 310. The secondinclination heater portions 431-2, 432-2 may have a lattice structure ofthe first heaters 410 and the second heaters 420 disposed such that thesecond inclination heater portions 431-2, 432-2 are inclined (e.g.,counterclockwise or in another direction) at a second angle θ2 withrespect to a line or plane extending along the lengthwise direction ofthe crucible 310.

The first concave portion 431 and the second concave portion 432 may bedisposed in the region D3-3 and the region D3-4 between the region D3-1and the region D3-2, and the region D3-3 and the region D3-4 may securea relatively large space between the heater 400 and the upper surface ofthe crucible 310 (compared to the region D3-1). Accordingly, in the casewhere the deposition material M having the same flowing speed isintroduced to the region D3-1, the region D3-3, and the region D3-4, athird pressure and a fourth pressure of the region D3-3 and the regionD3-4 may be smaller than the first pressure of the region D3-1.

A method in which the deposition material M introduced to the regionD3-1 moves up to the region D3-2 due to the pressure difference betweenthe region D3-1 and the region D3-3 and the region D3-4 may besubstantially the same as the content described in FIGS. 4A and 4B, anda repeated description thereof is omitted.

By way of summation and review, a deposition method may be implementedby using a deposition apparatus that includes among other elements anevaporator for evaporating a deposition material and a sprayer forspraying the evaporated gas molecules to form a layer on a glasssubstrate. In some deposition apparatuses, the evaporator and thesprayer may be disposed inside the same process chamber.

Therefore, a series of processes to form a layer on the glass substrateby evaporating a deposition material inserted in the evaporator andspraying the deposition material from the sprayer to the glass substrateto allow the deposition material to adhere to the glass substrate maytake place in the same process chamber.

In this case, high heat generated when evaporator operates may betransferred to parts such as sensors, etc., which thus may not operateproperly or not operate at all.

If the evaporator and the sprayer are disposed in separate processchambers and the chamber where the sprayer is disposed is maintained ina vacuum state, the probability that molecules of a deposition materialcollides with remaining gas molecules inside the process chamber beforereaching the glass substrate may be very low. Accordingly, heatgenerated by the evaporator may not be transferred to other parts insidethe process chamber. Therefore, to maintain the degree of vacuum of thesprayer and simultaneously maintain a high temperature state of theevaporator, the evaporator and the sprayer of the deposition apparatusmay be separately disposed.

In the case of a separate-type deposition apparatus including anevaporator and a sprayer separated from each other, e.g., in the case ofa deposition apparatus for manufacturing large-sized displayapparatuses, degradation of some deposition materials may occur due tothe characteristics of gas flow from the evaporator.

A deposition apparatus according to an exemplary embodiment may includean evaporator that has improved a flowage characteristic of a depositionmaterial, and thus may reduce degeneration or degradation of thedeposition material inside the evaporator.

Also, as degeneration or degradation of the deposition material disposedinside the evaporator is reduced, forming of a layer sprayed by asprayer, and purity of the residual may improve, so that a defect rateof a display apparatus may be advantageously lowered.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A deposition apparatus, comprising: a crucible toreceive the deposition material and in which a deposition material isevaporated; a linear deposition source having a sprayer to spray theevaporated deposition material; a first connection portion and a secondconnection portion spaced apart from each other by a predeterminedinterval, the first connection portion and the second connection portionconnecting the linear deposition source to the crucible at an uppersurface of the crucible; and a heater in the crucible to apply heat tothe deposition material, wherein the upper surface of the crucible has afirst convex portion and a second convex portion successively formedbetween the first connection portion and the second connection portion.2. The apparatus as claimed in claim 1, wherein: the crucible extendslengthwise in one direction, and the first convex portion and the secondconvex portion each include: a first inclination portion inclined at afirst angle with respect to the one direction, and a second inclinationportion inclined at a second angle with respect to the one direction. 3.The apparatus as claimed in claim 1, wherein the crucible includes afirst joining portion that connects the first convex portion with thesecond convex portion, the first joining portion having a curved shape.4. The apparatus as claimed in claim 2, wherein the crucible includes asecond joining portion that connects the first inclination portion withthe second inclination portion, the second joining portion having acurved shape.
 5. The apparatus as claimed in claim 1, wherein: theheater includes a plurality of first heaters and a plurality of secondheaters, the plurality of first heaters extend in one direction and arearranged next to each other to be separated from each other by apredetermined pitch, and the plurality of second heaters extend in adirection perpendicular to the one direction and are arranged next toeach other to be separated from each other by a predetermined pitch. 6.The apparatus as claimed in claim 1, further comprising: a temperaturedetector in the crucible; and a temperature controller to transmit atemperature control signal to a power source that supplies power to theheater according to temperature of the crucible detected by thetemperature detector.
 7. The apparatus as claimed in claim 1, furthercomprising a transfer portion to move the linear deposition source andthe crucible in a first direction.
 8. The apparatus as claimed in claim7, wherein a substrate onto which the deposition material is sprayedfrom the linear deposition source has a large size.
 9. A depositionapparatus, comprising: a crucible to receive the deposition material andin which a deposition material is evaporated; a linear deposition sourcehaving a sprayer to spray the evaporated deposition material; a firstconnection portion and a second connection portion spaced apart fromeach other by a predetermined interval, the first connection portion andthe second connection portion connecting the linear deposition source tothe crucible at an upper surface of the crucible; and a heater in thecrucible to apply heat to the deposition material, wherein the heaterfaces the upper surface of the crucible and includes a first concaveportion and a second concave portion successively formed between thefirst connection portion and the second connection portion.
 10. Theapparatus as claimed in claim 9, wherein: the crucible extendslengthwise in one direction, and the first concave portion and thesecond concave portion each include: a first inclination heater portioninclined at a first angle with respect to the one direction, and asecond inclination heater portion inclined at a second angle withrespect to the one direction.
 11. The apparatus as claimed in claim 10,wherein: the first inclination heater portion and the second inclinationheater portion each include a plurality of first heaters and a pluralityof second heaters, the plurality of first heaters extend in onedirection and are arranged next to each other to be separated from eachother by a predetermined interval, and the plurality of second heatersextend in a direction perpendicular to the one direction and arearranged next to each other to be separated from each other by apredetermined interval.